Appeal No. 1998-0077
Application No. 08/247,910
subsequently etching the polysilicon layer to form a resistor
that includes the resistor body and at least two contact
portions abutting the resistor body, as claimed in Appellants'
claim 21. Appellants further argue that Ning, Hanagasaki,
Winnerl et al., and Brower fail to teach, subsequent to the
step of removing a portion of the first insulating layer,
patterning and etching the polysilicon layer to define first
and second contact portions abutting the resistor body and
simultaneously forming at least one polysilicon element of a
second electronic device, as claimed in Appellants' claim 22.
Appellants argue that Ning, Hanagasaki, Winnerl et al., and
Brower fail to teach a second doping step of doping the
contact portions of the polysilicon resistor prior to
patterning and etching the polysilicon layer, as claimed in
claims 26 and 34. Finally, Appellants argue that Ning,
Hanagasaki, Winnerl et al., and Brower fail to teach the step
of doping both n-type and p-type impurities, as claimed in
claim 31.
In the answer, the Examiner argues at pages 3 to 5 that
the prior art teaches the claimed method and that the
combination of Ning, Hanagasaki, Winnerl et al., and Brower is
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