Appeal No. 1998-1069
Application No. 08/259,575
an n-type first well 8 by implanting ions at 160 keV, forming
a
p-type second well 5 by implanting ions at 160 keV, forming an
oxide layer 3 & 7a, and forming first and second gate
structures 17. The Examiner then states that Schwabe does 15
not disclose forming first and second gate structures from
polysilicon, performing a first LDD implant concurrently into
the first and second wells, forming sidewalls, and performing
separate implants at 40-180 keV at a dose in the range of 1015
16 2
- 10 atoms/cm .
The Examiner then adds Bergonzoni's disclosure of16
forming first and second gate structures 6 from polysilicon,
performing a first LDD implant concurrently into the regions
where the first and second CMOS transistors are to be formed,
and forming sidewalls 8. The Examiner argues that although
Bergonzoni does not disclose forming an NMOS device within a
p-type well, forming the NMOS device within a p-type well
15Final rejection, page 6
16Final rejection, page 7
11
Page: Previous 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Next
Last modified: November 3, 2007