Appeal No. 1998-1069
Application No. 08/259,575
instead of a p-type substrate would have been well known in
the art, as it is depicted in figure 7 of Schwabe.
The Examiner then points to Hsu for the teaching of
performing the first and second LDD implants at a dosage on
15 14 2
the order of 10 - 10 atoms/cm , at implantation energies of
50-170 keV, and at implantation energies of 50-120 keV, and
that the use of implant specifications would have been well
known to one in the art.
The Examiner then points to Ichikawa's teaching that
performing separate implants at 40-[1]80 [sic] keV at a dose
15 16 2
in the range of 10 - 10 atoms/cm would have been well known
to one in the art, and as a result the claim implantation
energies are prima facie obvious based on process optimization
as determined through routine experimentation.
In response to Appellant's assertion that Schwabe does
not show a process for creating source and drain regions
having LDD tip regions extending from main source and drain
regions, the Examiner notes Appellant's admission that "a17
partial solution to the hot electron effect, known in the
17Answer, page 5
12
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