Appeal No. 1998-1069
Application No. 08/259,575
is performed (Schwabe and Yamane), and a first LDD implant is
not performed simultaneously in both the NMOS and PMOS regions
(as in Schwabe, Ichikawa and Hsu).
In regard to the references wherein no conditions for
implants are provided, Appellant notes that it would be
equally likely that an artisan would choose other conditions.
Finally, Appellant argues that the cited art fails to
teach the desirability of employing relatively high LDD
implant energies to overcome problems associated with high
channel current densities, and the necessity of forming well
regions at high energies to allow LDD implants to be
subsequently performed at high energies.
It is the Examiner's position that the methods of 14
Schwabe, Bergonzoni, Hsu, Ichikawa and Yamane individually
form CMOS devices, "but taken collectively would suggest to
those of ordinary skill in the art that a CMOS device as
disclosed by the claimed invention could be formed."
Specifically, the Examiner finds that Schwabe discloses a
method of making a semiconductor device that includes forming
14Examiner's Answer, page 5; Supplemental Examiner's
Answer, page 4
10
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