Appeal No. 1998-1069
Application No. 08/259,575
prior art, is the provision of a lightly doped drain (LLD)
structure." Moreover, the Examiner asserts that Bergonzoni's
method would have suggested to one of ordinary skill in the
art that a CMOS device having an LDD structure could be formed
by modifying the method of Schwabe et al.
As regards the issue of ion kinetic energies of
Bergonzoni being 60 keV, which is less than the claimed "at
least about 70 keV," the Examiner posits that neither
Appellant's specification nor any additional evidence suggests
to one in the art that 70 keV is critical to the claimed
invention. The Examiner thereby finds that the claimed 18
kinetic energy is deemed to be
prima facie obvious based on process optimization as
determined through routine experimentation by one of ordinary
skill in the art.
In response to Appellant's arguments that Bergonzoni does
not show that a p-well is formed, and that in the process of
Hsu no p-well is formed, the Examiner points to Schwabe's
teaching of the suitability of forming an NMOS transistor
18Answer, page 7
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