Appeal No. 1998-1069
Application No. 08/259,575
would have suggested to one of ordinary skill in the art that
the combination of Schwabe and Bergonzoni could be modified by
performing separate ion implantations at kinetic energies of
40-180 keV and at implantation dosages in the range of 10 -15
16 2
10 atoms/cm to form source and drain junctions 312, 313.
In response to Appellant's assertion that Ichikawa fails
to disclose certain steps of the claimed invention, the
Examiner states that this reference has been included merely
to show that the claimed ion kinetic energies for forming
source and drain junctions would have been within the ordinary
skill of one in the art.
Finally, the Examiner notes Appellant's assertion that
Yamane does not show a process for creating source and drain
regions having LDD tip regions extending from main source and
drain regions, and fails to suggest any implant conditions for
comparison against the claims. In response, the Examiner
asserts that Yamane suggests to one skilled in the art that
source and drain junctions could be formed using the process
steps of forming pattern mask 6 over polysilicon layer 5a,
etching polysilicon layer 5a using the pattern mask 6, and
performing the first LDD implant while pattern mask 6 is
15
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