Appeal No. 1998-1069
Application No. 08/259,575
therefore cannot show a step of performing a first LDD implant
simultaneously in both n-well and p-well regions and a second
LDD implant in the first well, such that portions of the first
well that do not underlie the gate structure are converted to
second LDD layers of a second conductivity type.
As regards the Bergonzoni reference, Appellant asserts9
that this reference does not provide a separate step of
forming a
p-well, and that the source and drain junction implants, as
well as the n-well implants, are produced under undefined
conditions.
In review of the disclosure of Hsu, Appellant asserts10
that this reference does not show a step of performing a first
LDD implant simultaneously in both n-well and p-well regions,
and that no p-well is formed. Appellant also notes that the
source and drain implants, and the n-well are formed under
undefined conditions.
9Brief, pages 10-11, section 4.2
10Brief, page 11, section 4.3
8
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