implant is performed with ions of a second conductivity type
(p-) having ion kinetic energies of at least about 70 keV and
an ion dose in the range of about 7 x 10 - 5 x 10 atoms/cm12 14 2
Appeal No. 1998-1069
Application No. 08/259,575
(specification, page 14, lines 27-32). The second LDD implant
is conducted in the first well such that portions of the first
well that do not underlie the first gate structure are
converted to second LDD layers of a second conductivity type.
Separate implants are then performed in the first and second
wells with ions having ion kinetic energy of at least about
40-180 keV and an ion dose in the range of 10 - 10 atoms/cm15 16 2
to form completed sources and drains in the first and second
wells (specification, page 15, lines 4-7; figures 6J and 6L)
Independent claim 54 is reproduced as follows:
54. A method of fabricating a device on a semiconductor
substrate, the method comprising the following steps:
providing a first well of a first conductivity type and a
second well of a second conductivity type that is opposite the
first conductivity type, both the first and second wells
having exposed surfaces on the semiconductor substrate, the
first and second wells being formed at implant energies
between about 150 and 400 keV;
providing an oxide layer on the exposed surfaces of the
first and second wells;
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