Appeal No. 1998-1069
Application No. 08/259,575
within p-well 5 and a PMOS transistor within n-well 8. The
Examiner then finds that the combination of Bergonzoni and
Hsu, by modifying the method of Schwabe, would have suggested
that the formation of a CMOS device having an LDD-type NMOS
transistor in a p-well, and an LDD-type PMOS transistor in an
n-well, would have been within the ordinary skill of one in
the art.
In response to Appellant's assertion that Hsu does not
show a step of performing a first LDD implant simultaneously
in both n-well and p-well regions, the Examiner points to 19
Bergonzoni's teaching of simultaneous implantation and finds
that one of ordinary skill in the art would have been
motivated to modify the method of Schwabe using the method of
Bergonzoni to form a CMOS device by means of a single
additional masking step.
As regards Appellant's assertion that Hsu fails to define
conditions for implanting source and drain junctions and the
n-well, the Examiner points to Ichikawa and finds that it20
19Answer, page 8
20Answer, pages 8-9
14
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