Ex Parte YOSHIHARA et al - Page 2



          Appeal No. 2001-2082                                                        
          Application No. 08/943,146                                                  

          eutectic portion (specification, page 4).  A surface portion on             
          the first substrate designates the location of bonding with the             
          second substrate (specification, pages 9 & 10).  Layers of                  
          titanium and gold are deposited on the second substrate wherein             
          the titanium layer deoxidizes a naturally formed oxide layer on             
          the surface portion of the first substrate while the gold layer             
          forms the gold-silicon eutectic portion (specification, pages 22            
          & 23).  By eliminating the naturally formed silicon oxide, a                
          uniform and void-free eutectic layer can be formed that contacts            
          the entire surface portion resulting in a stable and uniform                
          bonding interface (specification, page 23).                                 
               Representative independent claims 1 and 21 are reproduced as           
          follows:                                                                    
                    1. A semiconductor device comprising:                             
                    a first substrate having a surface portion made of                
               silicon;                                                               
                    a second substrate bonded to the first substrate;                 
                    an eutectic portion of silicon and gold interposed                
               between the first and second substrates to directly contact            
               the surface portion of the first substrate at a first                  
               surface thereof and containing an oxide of metal that has              
               deoxidized silicon oxide, the oxide of metal existing in the           
               eutectic portion apart from the first substrate; and                   



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