Ex Parte YOSHIHARA et al - Page 5



          Appeal No. 2001-2082                                                        
          Application No. 08/943,146                                                  

          remaining between the eutectic portion and the substrate (answer,           
          page 4).  The Examiner also asserts that “the Ti layers of Mikkor           
          are substantially the same as the claimed Ti layers and should              
          function the same way” (answer, page 5).                                    
               Before addressing the Examiner’s rejection based on prior              
          art, as pointed out by our reviewing court, we must first                   
          determine the scope of the claim.  “[T]he name of the game is the           
          claim.”  In re Hiniker Co., 150 F.3d 1362, 1369, 47 USPQ2d 1523,            
          1529 (Fed. Cir. 1998).  Claims will be given their broadest                 
          reasonable interpretation consistent with the specification, and            
          limitation appearing in the specification are not to be read into           
          the claims.  In re Etter, 756 F.2d 852, 858, 225 USPQ 1, 5 (Fed.            
          Cir. 1985).                                                                 
               A review of claim 1 reveals that the claimed device requires           
          that the eutectic portion of silicon and gold contain an oxide of           
          metal that has deoxidized silicon oxide.  The device is further             
          required to include a gold layer between the eutectic portion and           
          the second substrate.  We find that Appellants’ specification and           
          figures 30-33 clearly describe the mechanism by which titanium              
          from layer 114 diffuses through gold layer 115 to deoxidize the             
          naturally oxidized silicon at the surface of silicon substrate              
          111 (specification, pages 22 & 23).  Thus, by deoxidizing silicon           
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