Ex Parte YOSHIHARA et al - Page 7



          Appeal No. 2001-2082                                                        
          Application No. 08/943,146                                                  

          possibilities.  The mere fact that a certain thing may result for           
          a given set of circumstances is not sufficient.”  Id.  948 F.2d             
          at 1269, 20 USPQ2d at 1749.                                                 
               After a review of Mikkor, we agree with Appellants’                    
          assertion that the gold-silicon eutectic portion containing an              
          oxide of metal that has deoxidized silicon oxide and the gold               
          layer interposed between the eutectic portion and the second                
          substrate are absent in the reference.  As depicted in Fig. 1,              
          Mikkor forms silicon oxide layer 2 over troughs in each of                  
          substrates 1A and 1B for preventing metal diffusion barrier 3               
          from reacting with the silicon substrate (col. 3, lines 27-34).             
          Mikkor also forms a titanium/tungsten layer over the oxide layer            
          as metal diffusion barrier 3 for blocking the diffusion of gold             
          into the silicon substrate (col. 3, lines 35-43).  The troughs              
          are filled with polysilicon to the level of substrate surface and           
          gold strip 5, having a width narrower than that of the trough, is           
          formed on one of the substrates over the polysilicon-filled                 
          trough (col. 3, lines 44-51).  Finally, the substrates are                  
          aligned, brought together and heated in a thermal gradient.  As             
          shown in Fig. 2, the gold layer and the silicon form eutectic               
          droplet or line 6 which migrates through recrystallized silicon             
          area 4 until it reaches barrier layer 3 and solidifies when the             
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