Appeal No. 2001-2082
Application No. 08/943,146
line 22). Shimbo discloses a semiconductor device (semiconductor
pressure transducer) comprising a first substrate (single-crystal
silicon plate 1) having a surface portion (the lower end of ring
portion 1b) as recited in Appellants’ claim 21. Shimbo further
discloses the claimed second substrate (substrate 3) bonded to
the first substrate only at the surface portion of the first
substrate (thick ring portion 1b whose lower end is bonded to the
upper surface of the substrate 3). Shimbo specifically discloses
that a eutectic portion made of silicon and gold is interposed
between the first substrate and the second substrate (Au-Si
eutectic alloy layer 4) and contacts the entire surface portion
of the first substrate (eutectic layer 4 directly contacts the
entire lower end of ring portion 1b). With respect to claim 22,
the reference also shows that the eutectic portion directly
contacts the entire surface portion (eutectic layer 4 directly
contacts the entire lower end of ring portion 1b without any
other layer interposed in between).
As discussed above, Shimbo teaches all the limitations of
independent claim 21 and dependent claim 22. Accordingly, claims
21 and 22 are rejected under 35 U.S.C. § 102 as being anticipated
by Shimbo.
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