Ex Parte Meagley et al - Page 2




             Appeal No. 2006-0367                                                                                   
             Application No. 10/353,506                                                                             

                    2. A complementary metal oxide semiconductor ("CMOS") device is formed by a                     
             combination of lithographic and etching techniques.  (Id. at ll. 4-6.)                                 


                    3. An interlayer dielectric ("ILD") material is deposited around the structures (e.g.,          
             transistors) and between the interconnections that constitute the CMOS device "for the                 
             purpose of establishing a dielectric constant."  (Id. at ll. 14-18.)                                   


                    4. The dielectric constant effects the speed at which signals propagate through                 
             the interconnections.  (Id. at ll. 18-20.)                                                             


                    5. The appellants have found that air gaps feature the lowest dielectric constant.              
             (Id. at ll. 21-24.)                                                                                    


                    6. Accordingly, the appellants' invention is a method for forming air gaps in                   
             semiconductor structures.  (Id. at p. 2, ll. 10-11.)                                                   











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