Appeal No. 2006-0367
Application No. 10/353,506
2. A complementary metal oxide semiconductor ("CMOS") device is formed by a
combination of lithographic and etching techniques. (Id. at ll. 4-6.)
3. An interlayer dielectric ("ILD") material is deposited around the structures (e.g.,
transistors) and between the interconnections that constitute the CMOS device "for the
purpose of establishing a dielectric constant." (Id. at ll. 14-18.)
4. The dielectric constant effects the speed at which signals propagate through
the interconnections. (Id. at ll. 18-20.)
5. The appellants have found that air gaps feature the lowest dielectric constant.
(Id. at ll. 21-24.)
6. Accordingly, the appellants' invention is a method for forming air gaps in
semiconductor structures. (Id. at p. 2, ll. 10-11.)
2
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