Appeal No. 2006-0367
Application No. 10/353,506
11. Claim 17 follows, with references to corresponding element of the appellants'
figures or passages of his specification added thereto:
17. A method comprising:
covering a semiconductor structure [15] with a thermally
decomposing layer [14];
forming a cover [12] including spin-on glass over said thermally
decomposing layer [14];
densifying [sic] the cover [12]; and
thermally decomposing the thermally decomposing layer [14]
underneath said cover [12].
12. According to the appellants' specification (p. 4, l. 16 - p. 5, l. 2.), the cover
"layer 12 may be sufficiently porous to facilitate the exhaustion of the decomposed
sacrificial layer 14 upon heating. A thin layer of hydrogen silsesquioxane (HSQ) or
methylsilsesquioxane (MSQ) spin-on glass (SOG) may be utilized as the capping
layer 12."
13. "After being cured, the HSQ or MSQ layer 14 may be exposed to electron
beam or plasma conditions to densify the HSQ or MSQ film to be like a silicon dioxide
film." (Spec., p. 5, ll. 2-5.)
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