Appeal No. 2006-0367
Application No. 10/353,506
PRIOR ART
14. Kohl is prior art under 35 U.S.C. § 102(e).
15. No attempt has been made to antedate Kohl.
16. Kohl "provides a method of forming an air gap or gaps (or multi level
structures having such gaps) within . . . semiconductor structures to reduce capacitive
coupling between [the structure's] electrical elements such as metal lines." Col. 3,
ll. 21-25.
17. More specifically, "a patterned layer of sacrificial material 30 is formed on a
substrate 32," col. 16, ll. 38-39; "the substrate may be a semiconductor wafer which
may, for example, contain transistors, diodes, and other semiconductor elements (as
are well known in the art)." Id. at ll. 45-47.
18. "[A] permanent dielectric 36 is deposited over the patterned layer of sacrificial
material 30. . . . The permanent dielectric 36 is deposited as a solid layer and covers
the sacrificial layer 30. . . ." Col. 17, ll. 7-10.
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