Appeal No. 2006-0367
Application No. 10/353,506
28. Chang is prior art under § 35 U.S.C. § 102(b).
29. Chang "relates to a method for making integrated circuits on semiconductor
substrates . . . using a hybrid low-k (low dielectric constant) intermetal dielectric (IMD)
layer that reduces the RC time delays." Col. 1, ll. 9-14.
30. Chang identifies a problem with porous insulators. Specifically, "low-k
insulators [that] are . . . very porous . . . do not provide good structural support for
integration. Further, absorbed moisture and other chemicals in the porous insulator can
cause corrosion of the metal lines." Id. at ll. 55-59.
31. Chang solves the problem by a plasma treatment. Specifically, a "low-k
insulator 18 is plasma treated, for example, with argon or nitrogen to densify the top
surface 19 of layer 18. . . ." Col. 4, ll. 41-43.
32. Because Kohl describes a semiconductor structure that includes a
permanent dielectric cover 36, i.e., an insulating cover; and Change explains that
plasma treatment of an insulator makes the insulator denser, and a denser insulator
provides good structural support for integration and resists moisture and other
chemicals that can corrode metal lines; one skilled in the art would have been motivated
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