Appeal No. 2006-2832
Application No. 09/833,953
Invention
Appellant describes his invention as follows:
According to the invention, a layer is formed over a transistor gate and a
field oxide region. For example, a polycrystalline silicon layer can be deposited
over a PFET gate oxide and a silicon dioxide isolation region on the same chip.
The layer is then doped over the transistor gate without doping the layer over the
field oxide. A photoresist layer can be used as a barrier to implant doping, for
example, to block N+ doping over the field oxide region. The entire layer is then
doped, for example, with P type dopant after removal of the doping barrier. The
second doping results in formation of a high resistivity resistor over the field oxide
region, without affecting the transistor gate. Contact regions are then formed of an
appropriate material, for example a silicide, for connecting the resistor to other
devices.
Claims 1 and 14 are representative of the claimed invention and are
reproduced as follows:
1. A method comprising steps of:
forming a layer over a transistor gate region and a field oxide region, said
transistor gate region being situated over a well and said field oxide region not
being situated over said well, wherein said field oxide region and said well are
situated in a substrate;
2
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