Appeal No. 2006-2832
Application No. 09/833,953
so as to form a high-doped region in said outer portion of said resistor region,
wherein said third dopant has said second conductivity type;
fabricating a contact region over said high-doped region in said outer portion
of said resistor region of said polycrystalline silicon layer after said step of doping
said outer portion of said resistor region of said polycrystalline silicon layer, said
contact region being electrically connected to said resistor region, wherein said
contact region comprises a silicide.
References
The references relied on by the Examiner are as follows:
Zaccherini 5,436,177 Jul. 25, 1995
Erdeljac et al. (Erdeljac) 5,489,547 Feb. 6, 1996
Shao et al. (Shao) 6,156,602 Dec. 5, 2000
Rejections At Issue
Claims 1, 3 to 12, 14, 15, and 17 to 23 stand rejected under 35 U.S.C. § 103
as being obvious over Zaccherini in view of Erdeljac and Shao.
Throughout our opinion, we make references to the Appellant’s briefs, and
to the Examiner’s Answer for the respective details thereof.1
1 Appellant filed an appeal brief on February 13, 2006. Appellant filed a reply
brief on June 13, 2006. The Examiner mailed an Examiner’s Answer on April 11,
2006.
5
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Next
Last modified: September 9, 2013