Appeal No. 2006-2832
Application No. 09/833,953
forming a doping barrier above said layer over said field oxide region after
said step of forming said layer;
doping said layer over said transistor gate region with a first dose of a first
dopant after said step of forming said doping barrier, wherein said dose of said first
dopant is a dosage greater than required to result in said layer over said transistor
gate region having transistor gate electrical properties, wherein said first dopant
has a first conductivity type;
removing said doping barrier after said step of doping said layer over said
transistor gate region with said first dose of said first dopant;
doping said layer over said transistor gate region and said field oxide region
with a second dose of a second dopant so as to form a high resistivity resistor in
said layer over said field oxide region after said step of removing said doping
barrier, wherein said second dopant has a second conductivity type, wherein said
first dose of said first dopant is higher than said second dose of said second dopant
such that said transistor gate electrical properties are unaffected by said second
dose of said second dopant;
forming a silicide blocking oxide layer over an inner portion of said layer
over said field oxide region after said step of doping said layer over said transistor
gate region and said field oxide region with said second dose of said second
dopant;
doping an outer portion of said layer over said field oxide region with a third
dopant so as to form a high-doped region in said outer portion of said layer over
said field oxide region after said step of forming said silicide blocking oxide layer
over said inner portion of said layer over said field oxide region, wherein said third
dopant has said second conductivity type;
fabricating a contact region for said high resistivity resistor over said high-
doped region in said outer portion of said layer over said field oxide region after
said step of doping an outer portion of said layer over said field oxide region,
wherein said contact region comprises a silicide.
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