Appeal No. 2005-0323 Page 2
Application No. 09/577,835
invention can be derived from a reading of exemplary claim 25,
which is reproduced as follows:
25. An integrated circuit comprising:
a semiconductor substrate;
a gate dielectric film disposed on a surface of the
substrate;
a gate electrode stack disposed on the gate dielectric film,
wherein the stack includes a plurality of layers located over the
gate dielectric film and forms continuously vertical sidewalls;
and
a plurality of composite spacers each extending continuously
from a bottom to a top of said continuously vertical sidewalls,
wherein each of said composite spacers further comprises a
nitride spacer vertically staked above an oxide spacer,
said oxide spacer extending along the bottom of said
continuously vertical sidewalls to an intermediate point in
between the top and the bottom of said continuously vertical
sidewalls, and
said nitride space spacer [sic] extending from the
intermediate point to the top of said continuously vertical
sidewalls.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Mogami 5,656,519 Aug. 12, 1997
Bai et al. (Bai) 5,861,340 Jan. 19, 1999
Gardner et al. (Gardner) 5,899,721 May 4, 1999
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