Ex Parte Pan et al - Page 6



          Appeal No. 2005-0323                                       Page 6           
          Application No. 09/577,835                                                  

          vertically stacked above an oxide spacer, at an intermediate                
          point, as shown in figure 9.  The examiner adds (answer, page 4)            
          that Gardner does not teach that the spacer structures extend               
          from a bottom to over a top of the continuously vertical                    
          sidewalls.  To overcome this deficiency of Gardner, the examiner            
          turns to Mogami for a teaching of a spacer structure extending              
          from a bottom to over the top of the continuously vertical                  
          sidewalls of a gate electrode stack, as shown in figure 8F.  The            
          motivation provided by the examiner (id.) is that the                       
          modification would have been obvious to an artisan in order to              
          prevent a short circuit between the source/drain regions and the            
          gate electrode stack.                                                       
               Appellants assert (brief, page 4) that the examiner has                
          failed to establish a prima facie case of obviousness.  It is               
          argued (brief, page 5) that as shown in figure 9, the composite             
          spacer fails to extend continuously from a bottom to a top of               
          said continuously vertical sidewall of metal silicide layer 122.            
          Appellants acknowledge (brief, page 6) that in Mogami, the oxide            
          sidewall is higher than the top of the gate electrode stack,                
          which electrically isolates the gate electrode from the                     
          source/drain regions, which is advantageous in preventing short             
          circuits between the gate electrode stack and the source/drain              





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