Ex parte HEDBERG et al. - Page 3




              Appeal No. 95-3658                                                                                                                          
              Application 07/777,877                                                                                                                      

                       Claim 1 is reproduced below.                                                                                                       

                                1.  An array built in self test (ABIST) system comprising                                                                 

                                a single semiconductor chip,                                                                                              

                                a memory array disposed on said semiconductor chip having a plurality of column lines and                                 
                       a plurality of row lines and at least one redundant column line and at least one redundant row line                                
                       with cells coupled to the lines at intersections thereof,                                                                          

                                first means coupled to said memory array for identifying a given number of faulty cells along                             
                       each of said column lines,                                                                                                         

                                first register means disposed on said semiconductor chip having a number of registers equal                               
                       to the number of redundant column lines,                                                                                           

                                means for applying column address signals to said first register means,                                                   

                                means coupled to said first identifying means for storing the address signals of each of the                              
                       column lines having said given number of faulty cells in said first register means,                                                

                                second means coupled to said memory array for identifying a faulty cell along each of said                                
                       row lines while masking the faulty cells having address signals of said column lines stored in said                                
                       first register means,                                                                                                              

                                second register means disposed on said semiconductor chip having a number of registers                                    
                       equal to the number of redundant row lines,                                                                                        

                                means for applying row address signals to said second register means,                                                     

                                means coupled to said second identifying means for storing the address signals of each of                                 
                       the row lines having a faulty cell in said second register means until said second register means is                               
                       filled to capacity and then storing the column line address signals of any additional faulty cells                                 
                       identified in said row lines in said first register means, and                                                                     

                                means coupled to said registers for substituting said redundant column and row lines for                                  
                       the column and row lines having address signals stored in said first and second register means.                                    

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