Appeal No. 1997-2041
Application No. 08/337,131
an Amendment After Final (paper number 15), claim 1 was
amended.
In general terms, the invention pertains to the
fabrication of electrically programmable read only memory
(EPROM) devices. The present invention illustrates a method
of making an EPROM device such that a floating gate member
asymmetrically overlaps a portion of a buried source region
and a buried drain region. The method includes forming a
floating gate member such that the floating gate-to-source
overlap is shorter than the floating gate-to-drain overlap
thus creating a device with shorter erase times and shorter
read and programming times. The method further requires that
those portions of the floating gate members that form the
floating gate-to-source overlap and the floating gate-to-drain
overlap are formed subsequent to the formation of the
plurality of source and drain regions.
2
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