Appeal No. 1997-2041
Application No. 08/337,131
The examiner relies on the disclosure of Chen to meet the
limitation of a semiconductor substrate including a
monocrystalline silicon layer. We note that the appellant did
not submit arguments in response to the examiner’s reliance on
Chen’s teaching of a monocrystalline silicon layer for the
semiconductor substrate. Instead, as recognized by both the
examiner (Answer, page 6) and the appellant (Brief, page 5),
this appeal turns on whether or not the prior art relied upon
by the examiner discloses the step of:
“... at least a portion of the
floating gate members is formed
subsequent to the formation of
the plurality of source areas and
the plurality of drain areas,
wherein the portion of the
floating gate members formed
subsequent to the formation of
the plurality of source areas and
the plurality of drain areas
overlaps a portion of the source
areas and a portion of the drain
areas...”
The examiner relies heavily on Hosokawa `872 and its
teaching that “...the substantial overlap margin (W ) is
1
required on the drain region side (3) during the formation
process....”(Answer, page 7) (emphasis added). From this, the
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