Appeal No. 1997-2041
Application No. 08/337,131
examiner reasons that as a result of forming the floating gate,
the overlap on the drain region is consequently formed.
In rebuttal, the appellant indicates (Brief, page 5) that
Hosokawa `872 fails to explicitly state the order of formation
of the source, drain and floating gate. The appellant further
submits that the statement pointed to by the examiner is
irrelevant to the order of formation of the floating gate
relative to the formation of the source and drain regions. We
find ourselves in general agreement with the appellant. We
fail to find any specific language, nor any intimation
whatsoever in the disclosure of Hosokawa `872 that reveals the
order in which the floating gate, the source and the drain are
formed on the semiconductor substrate. The fact that Hosokawa
`872 states that the floating gate region will be stretched
across the source region and the drain region and that a
substantial overlap margin (W ) is required on the drain region
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side (3) during the formation process does not, in itself, shed
any light on the order in which the source, the drain and the
floating gate are formed on the substrate. Although Hosokawa
`872 teaches on page 5, lines 2-6, that the source and drain
regions are formed by conventionally-known techniques, the
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