The opinion in support of the decision being entered today was not
written for publication and is not binding precedent of the Board.
Paper No. 21
UNITED STATES PATENT AND TRADEMARK OFFICE
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BEFORE THE BOARD OF PATENT APPEALS
AND INTERFERENCES
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Ex parte AKIHIRO NAKAMURA and YUTAKA HAYASHI
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Appeal No. 2000-0660
Application No. 08/985,278
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ON BRIEF
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Before FLEMING, RUGGIERO, and LALL, Administrative Patent Judges.
FLEMING, Administrative Patent Judge.
Decision on Appeal
This is a decision on appeal from the final rejection of
claims 1 through 3 and 5 through 11. Claim 4 has been cancelled.
The invention relates to a nonvolatile one-transistor memory
cell. The transistor memory cell includes a channel forming
region (11a), a tunnel film (12) formed over the channel forming
region (11a), a nitride film (13a) formed over the tunnel film
(12), a top oxide (13b) formed over the nitride film (13a) and a
gate electrode (14) formed over the top oxide film (13b). See
Appellants' specification page 4, line 20 to page 5, line 3, page
10, lines 7-22 and Figure 1. The tunnel film (12) is formed to
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