Appeal No. 2000-0660
Application No. 08/985,278
not disagree that Hayashi teaches all the other claim
limitations.
We find that Hayashi et al. clearly teaches that an 'MONOS'
type nonvolatile semiconductor memory . . . forms a single
transistor memory cell. Therefore, we find that Hayashi teaches
a "non-volatile one transistor memory cell" as claimed.
In regard to Appellants' argument as to the leakage current,
we find nothing in Appellants' claim limitations that requires
the "non-volatile one transistor memory cell" to operate without
the leakage current and thereby Appellants' claim language does
not preclude the reading of the Hayashi non-volatile one
transistor memory cell on Appellants' claim 1.
Appellants have not made any other arguments in regard to
the Hayashi reference and claim 1. We therefore find that the
teachings of Hayashi meet Appellants' claimed limitation.
Appellant has not made any other arguments. 37 CFR § 1.192
(a) states:
Appellant must, within two months from the date of the
notice of appeal under § 1.191 or within the time
allowed for reply to the action from which the appeal
was taken, if such time is later, file a brief in
triplicate. The brief must be accompanied by the fee
set forth in § 1.17 (c) and must set forth the
authorities and arguments on which appellant will rely
to maintain the appeal. Any arguments or authorities
not included in the brief will be refused consideration
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