Appeal No. 2000-0660
Application No. 08/985,278
3. A nonvolatile one-transistor memory cell as set forth in
claim 2, wherein the thickness of the tunnel film is 3.4 nm or
more.
5. A nonvolatile one-transistor memory cell comprising;
a channel-forming region of a semiconductor;
a tunnel film on said channel forming region;
an insulating film on said tunnel film; and
a gate electrode on said insulation film,
wherein said insulation film comprising a nitride film and a
top oxide film on said nitride film, the thickness of said top
oxide film being set to a thickness so that the amount of
transition of the carriers passing through the top oxide film is
almost equal to or larger than the amount of transition of the
carriers passing through the tunnel film under a read voltage
applied to said gate electrode.
References
The references relied on by the Examiner are as follows:
Hayashi et al. (Hayashi) 4,868,632 Sep. 19, 1989
Hayabuchi 5,324,675 Jun. 28, 1994
Young 5,621,683 Apr. 15, 1997
(filed Dec. 5, 1995)
Rejections at Issue
Claims 1 and 2 stand rejected under 35 U.S.C. § 102 as being
anticipated by Hayashi. Claims 5 and 6 stand rejected under
35 U.S.C. § 102 as being anticipated by Hayabuchi. Claim 3
stands rejected under 35 U.S.C. § 103 as being unpatentable over
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