Appeal No. 2000-0660
Application No. 08/985,278
have a thickness of 2.2 nm or more (see Appellants' specification
page 10, lines 19-23) and desirably a 3.4 nm or more thickness.
See Appellants' specification page 11, lines 6 and 7.
Alternatively, the top oxide (13b) set to almost the same
thickness as the thickness of the tunnel film (12) or preferably,
the top oxide is set to a smaller thickness than the thickness of
the tunnel film wherein the amount of transition of the carriers
passing through the top oxide film is almost equal to or larger
than the amount of the transition of the carrier passing through
the tunnel film. See Appellants' specification page 6, line 22
to page 7, line 6.
Independent claims 1 and 5 and dependent claim 3 are
reproduced as follows:
1. A nonvolatile one-transistor memory cell comprising:
a channel-forming region of a semiconductor;
a tunnel film on said channel forming region;
an insulation film on said tunnel film; and
a gate electrode on said insulation film,
wherein said insulation film includes a nitride film and a
top oxide film on said nitride film, the thickness of the tunnel
film being within a range where charges in the channel forming
region directly tunnel through the tunnel film and is 2.2 nm or
more.
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