Ex Parte KODAMA - Page 1




          The opinion in support of the decision being entered today was              
          not written for publication and is not binding precedent of the             
          Board.                                                                      
                                                            Paper No. 21              

                      UNITED STATES PATENT AND TRADEMARK OFFICE                       
                                     __________                                       
                         BEFORE THE BOARD OF PATENT APPEALS                           
                                  AND INTERFERENCES                                   
                                     __________                                       
                               Ex parte NORIAKI KODAMA                                
                                     __________                                       
                                Appeal No. 2001-2659                                  
                               Application 08/919,674                                 
                                     ___________                                      
                                      ON BRIEF                                        
                                     ___________                                      
          Before OWENS, DELMENDO and POTEATE, Administrative Patent Judges.           
          OWENS, Administrative Patent Judge.                                         

                                 DECISION ON APPEAL                                   
               This appeal is from the final rejection of claims 1-13,                
          which are all of the claims in the application.                             
                                    THE INVENTION                                     
               The appellant claims a method for making a nonvolatile                 
          semiconductor storage device comprising, on the same                        
          semiconductor base, 1) a two-layered gate electrode having a                
          floating gate and a control gate, and 2) a MOS transistor, for              
          use in a peripheral circuit, having a single gate electrode.                

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