Ex Parte Christenson et al - Page 2

                Appeal 2007-0908                                                                                 
                Application 10/152,077                                                                           
                A. Introduction                                                                                  
                       Appellants ("Christenson") appeal under 35 U.S.C. § 134 from the                          
                final rejection of claims 1-5, 8-11, and 45-57, which are all of the pending                     
                claims, as unpatentable under 35 U.S.C. § 103(a) in view of various                              
                references.  We have jurisdiction under 35 U.S.C. § 6(b).  We REVERSE-                           
                IN-PART, AFFIRM-IN-PART and enter NEW GROUNDS OF                                                 
                REJECTION.                                                                                       
                       The Claimed Subject Matter                                                                
                       The subject matter on appeal relates to a process of rinsing and drying                   
                substrates in the microelectronics industry.                                                     
                       Claim 1 is illustrative and reads as follows:                                             
                       A method of processing a microelectronic device as rotatably                              
                       supported within a processing chamber, the method including                               
                       the steps of:                                                                             
                       [1] creating an atmosphere comprising gas within the                                      
                            processing chamber and about a surface of the                                        
                            microelectronic device supported within the processing                               
                            chamber;                                                                             
                       [2] rinsing the microelectronic device by                                                 
                            [2a] spraying a rinsing fluid onto a surface of the                                  
                                    device within the gas atmosphere                                             
                            while also                                                                           
                            [2b] supplying a surface tension reducing agent into the                             
                                    gas atmosphere within the processing chamber;                                
                       and                                                                                       
                       [3] drying the device by                                                                  
                            [3a] rotating the device at a predetermined drying                                   
                                    rotational speed for an effective time period to dry                         
                                    the device and,                                                              

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