Appeal 2007-0908
Application 10/152,077
B. Findings of Fact (FF)
The following findings of fact and any set out in the Discussion are
supported by a preponderance of the evidence of record.
Christenson's Disclosure
1. According to the Specification, the processing of microelectronic
devices typically involves treatments of the substrate surface with chemical
agents that are then removed by a rinsing step, and then by a separate drying
step. (Specification, paragraph bridging 1-2.)
2. The Specification states that "[e]xemplary microelectronic devices
include semiconductor wafers." (Specification at 6:24-25.)
3. The Specification indicates that, in microelectronics applications, re-
oxidation of the substrate is desirably avoided during the rinse and drying
step, as well as minimization of surface particles, electrostatic charge, and
water spots. (Specification at 2:10-32.)
4. The Specification teaches that these goals may be accomplished by
rinsing the substrate with a rinsing fluid in an atmosphere comprising a
gaseous surface tension reducing agent. (Specification at 3:10-15.)
Rinsing
5. According to the Specification, the rinse can be accomplished by
contacting the device with alternating flows of gaseous surface tension
reducing agent and rinsing fluid. (Specification at 3:15-18.)
6. The Specification teaches that the rinsing agent often comprises water.
(Specification at 7:10.)
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